| 摘要 |
<p>In a forming method for a gate insulating film that makes an HfO2 layer into a gate insulating film, a higher-k gate stack having an extremely small equivalent oxidation film thickness is achieved without forming a SiO2 layer at the interface. The forming method for a gate insulating film includes a step for forming a HfO2 layer (2) on a silicon substrate (1) by an atomic layer growth method, a step for forming an oxygen controlling metal layer (3) having an oxygen absorbing effect on the HfO2 layer (2), and a step for heat treating that heats the HfO2 layer (2) to the crystallization temperature. Before the heat treatment step, the amount of crystal growth nuclei in the HfO2 layer (2) is controlled.</p> |
