发明名称 POSITIVE RESIST MATERIAL AND PATTERNING METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist material, in particular, a chemically amplified positive resist material, which exhibits excellent resolution, coverage and adhesion on a highly reflective stepped substrate portion and gives a good pattern profile and minimal edge roughness after exposure, and thereby, which is particularly suitable as a fine pattern forming material for fabrication of VLSIs or a photomask by EB drawing. <P>SOLUTION: The positive resist material comprises: a polymeric compound having a weight average molecular weight of 1,000 to 500,000 and containing a (meth)acrylate repeating unit in which a hydrogen atom of a carboxyl group is substituted with a cyclic acid labile group; and a dihydroxynaphthalene novolac resin; and a photoacid generator. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012190000(A) 申请公布日期 2012.10.04
申请号 JP20120033501 申请日期 2012.02.20
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;NAGATA TAKESHI;MORISAWA TAKUMI
分类号 G03F7/039;C08F20/10;C08G8/04;G03F7/004;H01L21/027 主分类号 G03F7/039
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