| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a MOS transistor that allows the reduction of a circuit scale by having desired temperature characteristics. <P>SOLUTION: A gate insulating film 30 is provided on the region between a source region 51 and a drain region 52. A gate electrode 40 is provided on the gate insulating film 30. A depletion layer 42 occurs at the junction surface between a P-type semiconductor layer 41 and a lower layer (the gate insulating film 30) under the P-type semiconductor layer 41. When the temperature changes, the region of the depletion layer 42 in the gate electrode 40 changes and the influence of a gate voltage to channel formation changes, so that the threshold voltage has more changes than the case of an ordinary MOS transistor. Through the use of this feature, a MOS transistor is controlled so as to have desired temperature characteristics, so that a temperature compensation circuit is not necessary, thereby reducing a circuit scale. <P>COPYRIGHT: (C)2013,JPO&INPIT |
