SEMICONDUCTOR MEMORY DEVICES AND METHOD OF MANUFACTURING THE SAME

摘要

The semiconductor memory devices include an interfacial improvement resistance layer is formed between a polysilicon layer and a conductive layer in order to improve interfacial resistance between the polysilicon layer and the conductive layer. The method of manufacturing semiconductor memory devices includes forming a polysilicon layer over a semiconductor substrate, amorphizing the polysilicon layer, and stacking an interfacial improvement resistance layer and conductive layers over the amorphized polysilicon layer.