| 发明名称 |
FILM FORMATION METHOD AND NONVOLATILE MEMORY DEVICE |
| 摘要 |
<p>According to one embodiment, a film formation method can include irradiating a layer to be processed provided on an underlayer with an ionized gas cluster containing any one of oxygen and nitrogen to modify at least part of the layer.</p> |
| 申请公布号 |
WO2012131810(A1) |
申请公布日期 |
2012.10.04 |
| 申请号 |
WO2011JP05230 |
申请日期 |
2011.09.15 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA;SUGURO, KYOICHI |
发明人 |
SUGURO, KYOICHI |
| 分类号 |
H01L21/3105;H01L21/321 |
主分类号 |
H01L21/3105 |
| 代理机构 |
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