| 摘要 |
<p>A method for manufacturing a semiconductor is provided. A layer of protective film (13) is deposited on dummy wafers (10), and the dummy wafers (10) are fully covered by the protective film (13). During a thermal oxidation process, the dummy wafers (10) can not be oxidized, thus loss of the dummy wafers can be reduced, cost of production can be decreased, and particles produced due to oxidation of the dummy wafers can be avoided, to prevent the wafers (12) to be oxidized from contamination.</p> |
