| 摘要 |
<p>Provided is a laminated solid-state imaging element that does not fail even if excessive light impinges. The solid-state imaging element (100) has a plurality of pixels (101) that contain: a photoelectric conversion unit (P) above a substrate (10); and a circuit (S) that reads signals that are in accordance with the load arising at the photoelectric conversion unit (P). The circuit (S) contains: a charge storage unit (10) that stores positive holes that have moved to a pixel electrode (21) formed in the substrate (10); and an output transistor (32) that outputs a signal that is in accordance with the potential of the charge storage unit (10). The charge storage unit (10) is configured from: a charge storage region (11) that is electrically connected to the pixel electrode (21); a charge storage region (13) that is formed spaced adjacent to region (11); and a region (12) that electrically isolates region (11) and region (13) at potentials that are higher than a predetermined potential and electrically connects region (11) and region (13) at potentials that are no greater than the predetermined potential in a cross section potential. The output transistor (32) outputs a signal that is in accordance with the potential of region (13).</p> |
