SILICON CARBIDE SUBSTRATE

摘要

A first single crystal plate (11) has a first side surface and comprises silicon carbide. A second single crystal plate (12) has a second side surface that faces the first side surface and comprises silicon carbide. A bond part (BD) bonds the first side surface and the second side surface to each other between the first side surface and the second side surface, and comprises silicon carbide. At least a portion of the bond part (BD) has a polycrystalline structure. By employing this constitution, it becomes possible to provide a silicon carbide substrate which has a large size and enables the production of a semiconductor device with high yield.