| 摘要 |
PURPOSE: A thermal treatment method for a silicon wafer and the silicon wafer are provided to prevent deterioration of high temperature surface roughness under high temperatures in which extinction power of gap defects is strong. CONSTITUTION: A reaction chamber(20) comprises a supply opening part(22) and an exhaust opening part(26). The supply opening part supplies ambient gas(FA) to a first space(20a) and a second space(20b). A wafer holding part(30) comprises a heating element(32) and a rotation body(34). A heater(40) heats a wafer(W) from both sides thereof. The heater is composed of a plurality of halogen lamps(50).
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