发明名称 |
PHOTOELECTRIC CONVERSION ELEMENT |
摘要 |
A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.
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申请公布号 |
US2012247552(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
US201213422728 |
申请日期 |
2012.03.16 |
申请人 |
FUJIMOTO AKIRA;NAKANISHI TSUTOMU;NAKAMURA KENJI;MASUNAGA KUMI;ASAKAWA KOJI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUJIMOTO AKIRA;NAKANISHI TSUTOMU;NAKAMURA KENJI;MASUNAGA KUMI;ASAKAWA KOJI |
分类号 |
H01L31/0224;H01L31/0264;H01L31/0296;H01L31/0304;H01L31/0312;H01L31/036;H01L31/0368;H01L31/0376 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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