| 摘要 |
An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, wherein the waveguide region includes a first waveguide layer, a second waveguide layer and an active layer arranged between the first waveguide layer and the second waveguide layer and generates laser radiation, the waveguide region is arranged between a first cladding layer and a second cladding layer disposed downstream of the waveguide region in a growth direction of the semiconductor body, a phase structure for selection of lateral modes of the laser radiation emitted by the active layer is formed in the semiconductor body, wherein the phase structure comprises at least one cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer comprising a semiconductor material different from the semiconductor material of the second cladding layer is embedded into the second cladding layer, and the cutout extends from a top side of the semiconductor body at least partly into the first intermediate layer. |
