<p>Crystal growth apparatus having a source chamber (20) configured to contain a source material, a growth chamber (50), a passage (40) for transport of vapour from the source chamber (20) to the growth chamber (50), and a support (70) provided within the growth chamber (50) and configured to support a seed crystal (60). The coefficient of thermal expansion of the support (70) is greater than the coefficient of thermal expansion of the growth chamber (50).</p>
