发明名称 |
METHOD FOR MANUFACTURING PIEZOELECTRIC SUBSTRATE |
摘要 |
<p>This manufacturing method for a piezoelectric substrate has a step for forming material having a composition of M1-y/2+x(N1-yNby)O3+x (wherein, 0 = y = 0.045; M represents Pb1-pSrp, and 0 = p = 0.03; N represents Ti1-qZrq, and 0.45 = q = 0.60) in a sheet shape and a step for obtaining a piezoelectric substrate having a thickness of 30 µm or less and a surface area/thickness ratio of 1 × 107 µm or greater by firing the material formed into a sheet shape in a state of being placed on a setter. The variable x is a value within the crosshatched region (R) including the boundary line of the crosshatched region (R) shown in FIG. 1.</p> |
申请公布号 |
WO2012133529(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
WO2012JP58129 |
申请日期 |
2012.03.28 |
申请人 |
NGK INSULATORS, LTD.;EBIGASE TAKASHI;HIBINO TOMOHIKO |
发明人 |
EBIGASE TAKASHI;HIBINO TOMOHIKO |
分类号 |
C04B35/491;H01L41/187;H01L41/43 |
主分类号 |
C04B35/491 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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