SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A semiconductor device according to the present invention comprises an n-type MIS transistor, said n-type MIS transistor comprising: a first active region (11a) surrounded by element isolation regions (12) in a semiconductor substrate (11); a first gate-insulating film (16a) comprising a first high K dielectric insulating film (15a) containing a first adjusting metal; and a first gate electrode (19a) formed on the first gate insulating film. The projection amount that one end part of the first high-K dielectric insulating film (15a) projects by over a first element isolation section (12X) is smaller than the projection amount that an end part of the first gate electrode (19a) projects by over the first element isolation section (12X).