发明名称 LASER THIN FILM POLY-SILICON ANNEALING OPTICAL SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a gas discharge laser crystallization apparatus for performing a transformation of crystal growth or orientation in a film on a workpiece. <P>SOLUTION: A laser system is configured as a POPA laser system and further comprises: relay optics operative to direct a first output laser light pulse beam from a first laser PO unit into a second laser PA unit; and a timing and control module timing the creation of a gas discharge in the first and second laser units within plus or minus 3 ns, to produce the a second laser output light pulse beam as an amplification of the first laser output light pulse beam. The system comprises a divergence control part in an oscillator laser unit. The divergence control part comprises an unstable oscillation control part. The system further comprises a beam pointing control mechanism and a beam position control mechanism, between the laser and the workpiece. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012191221(A) 申请公布日期 2012.10.04
申请号 JP20120111806 申请日期 2012.05.15
申请人 TCZ LLC 发明人 WILLIAM N PARTLO;PALASH P DAS;RUSSELL HUDYMA;MICHAEL THOMAS
分类号 H01L21/268;B23K26/06;G03F;H01L21/20;H01S3/081;H01S3/22;H01S3/223;H01S3/225;H01S3/23 主分类号 H01L21/268
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