| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide high-efficiency, high-speed photoelectric conversion with reduced leak current in a simple manufacturing process. <P>SOLUTION: A photodiode 1 comprises: a substrate 2 formed of a semiconductor or a metal; an embedded insulating layer 3 formed on the substrate 2; semiconductor layers 5, 6, 7 including a p-type semiconductor layer 6 and an n-type semiconductor layer 7 formed side by side along a predetermined region on the embedded insulating layer 3; a gate insulating layer 8 formed on the semiconductor layers 5, 6, 7; and a diffraction grating portion 9 which is arranged on the gate insulating layer 8 and in which linear through grooves 9b are formed at equal intervals in a planar metal film 9a. <P>COPYRIGHT: (C)2013,JPO&INPIT |
