| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the cost of manufacturing a semiconductor device by simplifying a cleaning process of removing organic substances such as a photoresist film or metallic particles on the surface of a substrate. <P>SOLUTION: After removing organic substances such as a photoresist film or metallic particles by cleaning the surface of a semiconductor wafer using a sulfuric acid solution containing persulfuric acid produced with a persulfuric acid producing device without performing SPM cleaning, APM cleaning or HPM cleaning, the semiconductor wafer is cleaned with pure water and dried. Thus, higher resist removal performance is kept and the cleaning can be completed with fewer processes in comparison with the case of performing SPM cleaning that requires replenishment of a hydrogen peroxide solution. <P>COPYRIGHT: (C)2013,JPO&INPIT |
