| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with low power consumption and a large current value during operation, and provide a manufacturing method for the same. <P>SOLUTION: A semiconductor device includes: a first impurity diffusion layer of a second conductivity type formed in a source region on a substrate of a first conductivity type; a second impurity diffusion layer of the first conductivity type formed in a pocket region on the substrate; a third impurity diffusion layer of the first conductivity type formed in a drain region on the substrate; a gate insulation film formed on surfaces of the first to third impurity diffusion layers; and a gate formed on the gate insulation film. The pocket region is formed adjacent to the source region and has a recess. The gate is formed on the gate insulation film so as to fill the recess via the gate insulation film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
