发明名称 METHOD OF CONTROLLING SILICON OXIDE FILM THICKNESS
摘要 A deposition process for coating a substrate with films of a different thickness on front and rear surface of a substrate can be achieve in one growth. The thickness of the film deposition can be controlled by the separation between the substrates. Different separation distances between the substrates in the same chemical bath will result in different film thicknesses on the substrate. Substrates may be arranged to have different separation distances between front and back surfaces, a V-shaped arrangement, or placed next to a curtain with varying separation distances between a substrate and the curtain.
申请公布号 US2012252228(A1) 申请公布日期 2012.10.04
申请号 US201213434088 申请日期 2012.03.29
申请人 NATCORE TECHNOLOGY, INC. 发明人 ZHANG YUANCHANG
分类号 H01L21/314 主分类号 H01L21/314
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