PHOTOELECTRIC CONVERTER

摘要

A photoelectric converter (10) is provided with an n-type monocrystalline silicon substrate (21), an IN layer (25) and an IP layer (26) formed on the rear surface (12) of the n-type monocrystalline silicon substrate (21), an n-side electrode (40) electrically connected to the IN layer (25), and a p-side electrode (50) formed so as to be separate from the n-side electrode (40) and so as to be electrically connected to the IP layer (26). The thickness of at least a portion of the IN layer (25) and the IP layer (26) formed on a current isolation region (33) is thinner than the thickness of the corresponding IN layer (25) and IP layer (26) formed on another region.