| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, capable of suppressing surface roughness during activation annealing performed on a substrate including silicon carbide. <P>SOLUTION: A manufacturing method for a MOSFET includes: a step of preparing a substrate 8 having an epitaxial growth layer including silicon carbide attached; a step of performing ion implantation on the substrate 8 having the epitaxial growth layer attached; a step of forming a protective film 80 including silicon dioxide on the substrate 8 having the epitaxial growth layer attached, on which the ion implantation has been performed; and a step of heating the substrate 8 having the epitaxial growth layer attached, on which the protective film 80 has been formed, at a temperature range of 1600°C or more in an atmosphere containing gas including an oxygen atom. <P>COPYRIGHT: (C)2013,JPO&INPIT |
