SEMICONDUCTOR OPTICAL INTEGRATED CIRCUIT DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor optical integrated circuit device and a method of manufacturing the same capable of achieving both improvement of an absorption efficiency and reduction in an element resistance.

SOLUTION: A semiconductor optical integrated circuit device at least has: a waveguide part consisting of a waveguide core layer that is formed on a semiconductor substrate and has at least a mesa shape part; and a photodiode part at least having a first conductivity type spacer layer, an absorption layer, and an upper clad layer having a second conductivity type opposite to the first conductivity type that are sequentially laminated on an extended part of the waveguide core layer. At least a part of the first conductivity type spacer layer is a mesa shape. A first conductivity type semiconductor layer having a refraction index smaller than that of the first conductivity type spacer layer is provided so as to contact with a lateral face of the mesa-shaped first conductivity type spacer layer.

COPYRIGHT: (C)2013,JPO&INPIT