| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide, for example, a light-receiving element that can receive light up to a long-wavelength range of the near infrared, can reduce dark current even if the density of pixels is increased, and does not have any risk of losing the crystallinity of the pixels. <P>SOLUTION: A light-receiving element 50 composed of a group III-V semiconductor having light-receiving sensitivity in the near-infrared wavelength range comprises a light-receiving part 10 having the group III-V semiconductor with band-gap energy corresponding to the near-infrared wavelength range. The light-receiving part 10 is buried so as to be surrounded by a semiconductor layer 1 having larger band-gap energy than the light-receiving part. <P>COPYRIGHT: (C)2013,JPO&INPIT |
