| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device capable of suppressing increase in capacity of a floating diffusion region. <P>SOLUTION: There is provided a photoelectric conversion device comprising: a semiconductor substrate on which a photoelectric conversion element, a floating diffusion region, a transfer transistor, and an amplification transistor are provided; and a plurality of wiring layers including a first wiring layer and a second wiring layer. In the photoelectric conversion device, a gate electrode of the transfer transistor and the second wiring layer are connected in a stacked contact structure. <P>COPYRIGHT: (C)2013,JPO&INPIT |
