| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a forming method of a boron dope conductive diamond-like carbon thin film which is extremely low in electric resistance, and an electrode material integrally formed with the thin film on a metal base board. <P>SOLUTION: Hydrocarbon is used as a carbon source, an organic boron compound is used as a boron source, an argon gas is mixed as a reaction adjusting gas, and boron dope diamond-like carbon is formed on the base board by high-frequency plasma CVD. <P>COPYRIGHT: (C)2013,JPO&INPIT |
