| 发明名称 |
GALLIUM NITRIDE SEMICONDUCTOR DEVICE ON SOI AND PROCESS FOR MAKING SAME |
| 摘要 |
Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer. |
| 申请公布号 |
US2012252191(A1) |
申请公布日期 |
2012.10.04 |
| 申请号 |
US201213494110 |
申请日期 |
2012.06.12 |
| 申请人 |
BHAT RAJARAM;GADKAREE KISHOR PURUSHOTTAM;NAPIERALA JEROME;PINCKNEY LINDA RUTH;ZAH CHUNG-EN |
发明人 |
BHAT RAJARAM;GADKAREE KISHOR PURUSHOTTAM;NAPIERALA JEROME;PINCKNEY LINDA RUTH;ZAH CHUNG-EN |
| 分类号 |
H01L21/20;H01L33/00 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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