发明名称 |
Semiconductor Device And Test Method For Semiconductor Device |
摘要 |
A semiconductor device includes a first metal pattern formed on a first metal level. The first metal pattern has a U shaped first curved portion. A second metal pattern is formed on the first metal level. The second metal pattern has a U shaped second curved portion facing the first curved portion. A via structure is electrically connected to one of the first metal pattern and the second metal pattern. A third metal pattern is formed on a second metal level different from the first metal level and electrically connected to the via structure. |
申请公布号 |
US2012248437(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
US201113176855 |
申请日期 |
2011.07.06 |
申请人 |
LEE JONG-HYUN;PARK KI-HEUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG-HYUN;PARK KI-HEUNG |
分类号 |
H01L23/52 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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