发明名称 Semiconductor Device And Test Method For Semiconductor Device
摘要 A semiconductor device includes a first metal pattern formed on a first metal level. The first metal pattern has a U shaped first curved portion. A second metal pattern is formed on the first metal level. The second metal pattern has a U shaped second curved portion facing the first curved portion. A via structure is electrically connected to one of the first metal pattern and the second metal pattern. A third metal pattern is formed on a second metal level different from the first metal level and electrically connected to the via structure.
申请公布号 US2012248437(A1) 申请公布日期 2012.10.04
申请号 US201113176855 申请日期 2011.07.06
申请人 LEE JONG-HYUN;PARK KI-HEUNG;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JONG-HYUN;PARK KI-HEUNG
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
主权项
地址