| 发明名称 |
METHOD FOR FORMING COPPER WIRE |
| 摘要 |
<p>A method for forming a copper wire of the present invention comprises: forming a barrier film (204) on all surfaces of a wafer (W) which comprises a trench (203); forming a ruthenium film (205) on the barrier film (204); burying the trench (203) by forming a pure copper film (206) on the ruthenium film (205) by PVD; forming a copper alloy film (207) on the pure copper film (206) by PVD; forming a copper wire (208) by polishing all surfaces by CMP; forming a cap layer (209) on the copper wire (208) by using a dielectric material; and segregating an alloy content included in the copper alloy film (207) at a region including a portion corresponding to a boundary surface between the copper wire (208) and the cap layer (209).</p> |
| 申请公布号 |
WO2012133400(A1) |
申请公布日期 |
2012.10.04 |
| 申请号 |
WO2012JP57919 |
申请日期 |
2012.03.27 |
| 申请人 |
TOKYO ELECTRON LIMITED;KATO TAKARA;ISHIZAKA TADAHIRO;GOMI ATSUSHI;HATANO TATSUO;MIZUSAWA YASUSHI |
发明人 |
KATO TAKARA;ISHIZAKA TADAHIRO;GOMI ATSUSHI;HATANO TATSUO;MIZUSAWA YASUSHI |
| 分类号 |
H01L21/3205;H01L21/28;H01L21/285;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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