APPARATUS FOR DUAL-BAND CLASS-F GAN POWER AMPLIFICATION USING A STRUCTURE OF META ELECTROMAGNETIC WAVES

摘要

PURPOSE: A dual band class-F GaN(Gallium Nitride) power amplifier using a meta electromagnetic wave structure is provided to eliminate unbalanced output characteristics between dual bands by removing restriction to multi-band matching. CONSTITUTION: A harmonic control circuit(HC) comprises a first unit cell(UC1) and a second unit cell(UC2) which are mutually connected in parallel. The first unit cell includes a first CRLH(Composite Right/Left-Handed) transmission line(301) and a second CRLH transmission line(302). The first unit cell further includes a first connection line(305) which includes a plurality of capacitors and a first inductor line(307) which includes a ground. The second unit cell includes a third CRLH transmission line(303) and a fourth CRLH transmission line(304). The second unit cell further includes a second connection line(306) which includes the plurality of capacitors and a second inductor line(308) which includes the ground.