PRECURSOR COMPOSITION FOR OXIDE SEMICONDUCTOR AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME

摘要

PURPOSE: A precursor composition for an oxide semiconductor and a method for manufacturing a thin film transistor array panel using the same are provided to lower the processing temperature below 250 degrees by using a precursor of an oxide semiconductor containing a metal complex formed of a metal ion and an organic ligand. CONSTITUTION: A precursor composition for an oxide semiconductor comprises a metal complex formed of a metal ion and an organic ligand and is expressed in chemical formula 1, MAn, where M is the metal ion, A includes A-substituted carboxylate, and n is a natural number. A method for manufacturing a thin film transistor array panel comprises the steps of: preparing a metal compound solution containing the metal complex formed of the metal ion and the organic ligand(S1), coating the metal compound solution on a substrate(S2), and heat-treating the metal compound solution(S4). [Reference numerals] (S1) Preparing metal composition solution; (S2) Coating; (S3) Pre-treatment; (S4) Heat treatment