发明名称 |
LOW MELTING POINT SPUTTER TARGETS FOR CHALCOGENIDE PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME |
摘要 |
<p>In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.</p> |
申请公布号 |
EP2504463(A2) |
申请公布日期 |
2012.10.03 |
申请号 |
EP20100833912 |
申请日期 |
2010.11.24 |
申请人 |
AQT SOLAR, INC. |
发明人 |
BARTHOLOMEUSZ, MICHAEL;MUNTEANU, MARIANA;BARTHOLOMEUSZ, BRIAN, JOSEF;GIRT, EROL |
分类号 |
C23C14/34;B22F3/115;C23C14/14 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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