| 摘要 |
<p>To provide an etching composition of a thin-film transistor liquid crystal display device which is used to form an Mo/AlNd double film or an Mo/AlNd/Mo triple film which is a gate wiring material composing a TFT of the thin-film transistor liquid crystal display device using the same composition, in a single process without an undercut phenomenon on a lower film formed of AlNd or Mo and by a wet etching to acquire a superior taper, and also allows the formation of a superior profile in an Mo single film which is a source/drain wiring material, and in the Mo/AlNd/Mo triple film. The invention relates to the etching composition of the thin-film transistor liquid crystal display device, specifically to the etching composition containing a) phosphoric acid, b) nitric acid, c) acetic acid, d) lithium compound, e) phosphate compound and f) water.</p> |
