| 摘要 |
A substrate is provided with a first wiring layer , an interlayer insulating film on the first wiring layer 111, a hole formed in the interlayer insulating film, a first metal layer covering the hole , a second metal layer formed in the hole , a dielectric insulating film on the first metal layer , and second wiring layers on the dielectric insulating film , wherein the first metal layer constitutes at least part of the lower electrode, an area, facing the lower electrode, of the second wiring layers constitutes the upper electrode, and a capacitor is constructed of the lower electrode, the dielectric insulating film and the upper electrode. |
