Magnetic random access memory cell with a dual junction for ternary content addressable memory applications

摘要

The present disclosure concerns a magnetic random access memory (MRAM) cell (1) comprising a soft ferromagnetic layer (21) having a magnetization that can be freely aligned; a first hard ferromagnetic layer (23) having a first storage magnetization (230); a first tunnel barrier layer (22) comprised between the soft ferromagnetic layer (21) and the a first hard ferromagnetic layer (23); a second hard ferromagnetic layer (25) having a second storage magnetization (250); and a second tunnel barrier layer (24) comprised between the soft ferromagnetic layer (21) and the second hard ferromagnetic layer (25); wherein the first storage magnetization (230) can be freely oriented at a first high predetermined temperature threshold (Tw1) and the second storage magnetization (250) can be freely oriented at a second predetermined high temperature threshold (Tw2); the first high predetermined temperature threshold (Tw1) being higher than the second predetermined high temperature threshold (Tw2). The MRAM cell (1) disclosed herein can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.