发明名称 METHOD FOR PRODUCING NITRIDE CRYSTALS, AND PRODUCTION VESSEL AND MEMBERS
摘要 <p>To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 µm.</p>
申请公布号 EP2505696(A1) 申请公布日期 2012.10.03
申请号 EP20100833282 申请日期 2010.11.25
申请人 MITSUBISHI CHEMICAL CORPORATION;TOHOKU UNIVERSITY;THE JAPAN STEEL WORKS, LTD. 发明人 MIKAWA, YUTAKA;ISHIGURO, TORU;YAMAMURA, YOSHIHIKO;KIYOMI, MAKIKO;KAGAMITANI,YUJI
分类号 C30B29/38;C30B7/10;C30B29/40 主分类号 C30B29/38
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