发明名称 |
METHOD FOR PRODUCING NITRIDE CRYSTALS, AND PRODUCTION VESSEL AND MEMBERS |
摘要 |
<p>To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 µm.</p> |
申请公布号 |
EP2505696(A1) |
申请公布日期 |
2012.10.03 |
申请号 |
EP20100833282 |
申请日期 |
2010.11.25 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION;TOHOKU UNIVERSITY;THE JAPAN STEEL WORKS, LTD. |
发明人 |
MIKAWA, YUTAKA;ISHIGURO, TORU;YAMAMURA, YOSHIHIKO;KIYOMI, MAKIKO;KAGAMITANI,YUJI |
分类号 |
C30B29/38;C30B7/10;C30B29/40 |
主分类号 |
C30B29/38 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|