发明名称 Method of fabricating a thin film transistor substrate and a photosensitive composition used in the thin film transistor substrate
摘要 Disclosed is a method of producing a thin film transistor substrate having high light sensitivity, heat-resistance, impact resistance, and a photosensitive composition used by the same, the method including forming data wires on an insulating substrate, forming an organic insulating film on the data wires by applying a photosensitive composition comprising a terpolymer, where the terpolymer is derived from monomers of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture thereof, an unsaturated epoxy group-containing compound, and an olefinic compound.
申请公布号 US8278021(B2) 申请公布日期 2012.10.02
申请号 US20080170487 申请日期 2008.07.10
申请人 KANG HOON;KIM JAE-SUNG;JUNG YANG-HO;LEE HI-KUK;SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG HOON;KIM JAE-SUNG;JUNG YANG-HO;LEE HI-KUK
分类号 C08J3/28;C08F2/46;G03C1/72;G03C7/00 主分类号 C08J3/28
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