发明名称 Laser processing method
摘要 While six rows of molten processed regions 131, 132 to become a cutting start point are formed within a silicon wafer 11 along a line to cut 5, a weakened region 18 is formed in a rear face 21 of an object to be processed 1 along the line to cut 5 when forming the molten processed region 131 closest to the rear face 21. Since the molten processed regions 131, 132 are thus formed within the silicon wafer 11, particles can be prevented from occurring from the molten processed regions 131, 132. Also, since the weakened region 18 having a predetermined depth is formed on the rear face 21 of the object 1 along the line to cut 5, the object 1 can be cut along the line to cut 5 with a relatively small external force.
申请公布号 US8278592(B2) 申请公布日期 2012.10.02
申请号 US20070441677 申请日期 2007.09.13
申请人 SAKAMOTO TAKESHI;HAMAMATSU PHOTONICS K.K. 发明人 SAKAMOTO TAKESHI
分类号 H01L21/301;B23K26/38 主分类号 H01L21/301
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