发明名称 |
Heat dissipation structure for electronic device and fabrication method thereof |
摘要 |
A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. An ultrananocrystalline diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer and enclosed by the ultrananocrystalline diamond film, wherein the ultrananocrystalline diamond film and the first conductive pattern layer do not overlap with each other as viewed from a top-view perspective. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.
|
申请公布号 |
US8278755(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20100975326 |
申请日期 |
2010.12.21 |
申请人 |
TAIN RA-MIN;DAI MING-JI;LIN I-NAN;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
TAIN RA-MIN;DAI MING-JI;LIN I-NAN |
分类号 |
H01L23/48;H01L21/28 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|