发明名称 Heat dissipation structure for electronic device and fabrication method thereof
摘要 A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. An ultrananocrystalline diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer and enclosed by the ultrananocrystalline diamond film, wherein the ultrananocrystalline diamond film and the first conductive pattern layer do not overlap with each other as viewed from a top-view perspective. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.
申请公布号 US8278755(B2) 申请公布日期 2012.10.02
申请号 US20100975326 申请日期 2010.12.21
申请人 TAIN RA-MIN;DAI MING-JI;LIN I-NAN;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 TAIN RA-MIN;DAI MING-JI;LIN I-NAN
分类号 H01L23/48;H01L21/28 主分类号 H01L23/48
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