发明名称 |
Methods of forming nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein |
摘要 |
Methods of forming nonvolatile memory devices according to embodiments of the invention include techniques to form highly integrated vertical stacks of nonvolatile memory cells. These vertical stacks of memory cells can utilize dummy memory cells to compensate for process artifacts that would otherwise yield relatively poor functioning memory cell strings when relatively large numbers of memory cells are stacked vertically on a semiconductor substrate using a plurality of vertical sub-strings electrically connected in series. |
申请公布号 |
US8278170(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US201113165576 |
申请日期 |
2011.06.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANGHYUN;SHIM SUNIL;JANG JAEHOON;HUR SUNGHOI;KIM HANSOO;KIM KIHYUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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