发明名称 |
HEAT SHIELD FOR MANUFACTURING SINGLE CRYSTAL INGOT, SINGLE CRYSTAL INGOT GROWER INCLUDING THE SAME AND METHOD FOR REMOVING A CONTAMINANT OF HEAT SHIELD FOR MANUFACTURING SINGLE CRYSTAL INGOT |
摘要 |
PURPOSE: A heat shield for growing a single crystal ingot, a single crystal ingot growing device, and a method for removing the contamination of the heat shield are provided to efficiently remove oxide by adopting a structure to separate a side ring from a body. CONSTITUTION: A heat shield(150) is formed in a single crystal growing device chamber(110). A side ring(157) is arranged in a body(155). The side ring is attached to or detached from the body. The body is arranged between heaters(130).
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申请公布号 |
KR20120107192(A) |
申请公布日期 |
2012.10.02 |
申请号 |
KR20110024740 |
申请日期 |
2011.03.21 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
KIM, SE HUN;KIM, SANG HEE;CHOI, YOUNG KYU |
分类号 |
C30B15/00;C30B29/06;H01L21/02 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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