发明名称 HEAT SHIELD FOR MANUFACTURING SINGLE CRYSTAL INGOT, SINGLE CRYSTAL INGOT GROWER INCLUDING THE SAME AND METHOD FOR REMOVING A CONTAMINANT OF HEAT SHIELD FOR MANUFACTURING SINGLE CRYSTAL INGOT
摘要 PURPOSE: A heat shield for growing a single crystal ingot, a single crystal ingot growing device, and a method for removing the contamination of the heat shield are provided to efficiently remove oxide by adopting a structure to separate a side ring from a body. CONSTITUTION: A heat shield(150) is formed in a single crystal growing device chamber(110). A side ring(157) is arranged in a body(155). The side ring is attached to or detached from the body. The body is arranged between heaters(130).
申请公布号 KR20120107192(A) 申请公布日期 2012.10.02
申请号 KR20110024740 申请日期 2011.03.21
申请人 LG SILTRON INCORPORATED 发明人 KIM, SE HUN;KIM, SANG HEE;CHOI, YOUNG KYU
分类号 C30B15/00;C30B29/06;H01L21/02 主分类号 C30B15/00
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