发明名称 Low power termination for memory modules
摘要 An apparatus is provided that includes a memory controller to provide a first on-die termination (ODT) signal and a second ODT signal, a memory channel, a first memory module to couple to the memory channel, and a second memory module to couple to the memory channel. The first memory module may include a first memory having a first ODT circuit to receive the first ODT signal, and a second memory having a second ODT circuit to receive the first ODT signal. The first ODT signal may disable the ODT circuit of the first memory when the first memory is to be ACTIVE.
申请公布号 US8279689(B2) 申请公布日期 2012.10.02
申请号 US201113109770 申请日期 2011.05.17
申请人 DAS RIPAN;INTEL CORPORATION 发明人 DAS RIPAN
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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