发明名称 Methods for forming wiring and manufacturing thin film transistor and droplet discharging method
摘要 It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.
申请公布号 US8278204(B2) 申请公布日期 2012.10.02
申请号 US201113012055 申请日期 2011.01.24
申请人 MAEKAWA SHINJI;MURANAKA KOJI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MAEKAWA SHINJI;MURANAKA KOJI
分类号 H01L21/44;H01L21/20;H01L21/26;H01L21/324;H01L21/336;H01L21/42;H01L21/477;H01L21/77;H01L21/84 主分类号 H01L21/44
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