发明名称 |
Method for fabricating semiconductor devices and a semiconductor device made therefrom |
摘要 |
A method for fabricating semiconductor devices includes: (a) forming over a temporary substrate a sacrificial film layer; (b) growing laterally and epitaxially an epitaxial film layer; (c) forming over the epitaxial film layer a patterned mask that covers partially the epitaxial film layer and that defines a plurality of through holes to expose a plurality of epitaxial surface regions, respectively; (d) forming a plurality of conductive members respectively in the through holes and on the epitaxial surface regions; (e) removing the patterned mask and removing a part of the epitaxial film layer and a part of the sacrificial film layer beneath the patterned mask; (f) removing the sacrificial film layer; and (g) removing the temporary substrate. |
申请公布号 |
US8278194(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US201113047442 |
申请日期 |
2011.03.14 |
申请人 |
WUU DONG-SING;HORNG RAY-HUA;WU CHIA-CHENG;YEN CHENG-YING;NATIONAL CHUNG-HSING UNIVERSITY |
发明人 |
WUU DONG-SING;HORNG RAY-HUA;WU CHIA-CHENG;YEN CHENG-YING |
分类号 |
H01L21/36 |
主分类号 |
H01L21/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|