发明名称 |
Methods of forming a semiconductor device having a contact structure |
摘要 |
A method of forming a semiconductor device having a contact structure includes forming an insulating layer on a semiconductor substrate, and selectively implanting impurity ions into a predetermined region of the insulating layer to generate lattice defects in the predetermined region of the insulating layer. A thermal treatment, such as quenching the insulating layer at a temperature change rate of at least −20° C./minute, is performed on the insulating layer having the lattice defects to accelerate generation of the lattice defects in the predetermined region such that a conductive region results from the generated lattice defects to provide current paths in the predetermined region. |
申请公布号 |
US8278180(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20100871273 |
申请日期 |
2010.08.30 |
申请人 |
LEE CHANGHUN;CHUN KEEMOON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANGHUN;CHUN KEEMOON |
分类号 |
H01L21/331;H01L21/302;H01L21/461 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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