Method for fabricating a thin film transistor array substrate with a thinned protective film over a storage capacitor

摘要

A thin film transistor array substrate and a fabricating method are disclosed. A gate line and a data line cross each other and a thin film transistor (TFT) is provided at the intersection between the gate and data lines. A protective film covers the data line and the thin film transistor and has a contact hole exposing a drain electrode of the TFT. A pixel electrode is connected, via the contact hole, to the drain electrode of the TFT. A storage capacitor includes a gate insulating film between the pixel electrode and the gate line and/or a common line. Some or all of the protective film within the storage capacitor is removed such that the storage capacitor contains no protective film or a layer of protective film that is thinner than the portion covering the TFT.