发明名称 |
Electrostatic discharge protection device |
摘要 |
An electrostatic discharge protection device coupled between a first power line and a second power line is provided. A first N-type doped region is formed in a P-type well. A first P-type doped region is formed in the first N-type doped region. A second P-type doped region includes a first portion and a second portion. The first portion of the second P-type doped region is formed in the first N-type doped region. The second portion of the second P-type doped region is formed outside of the first N-type doped region. A second N-type doped region is formed in the first portion of the second P-type doped region. The first P-type doped region, the first N-type doped region, the second P-type doped region and the second N-type doped region constitute an insulated gate bipolar transistor (IGBT). |
申请公布号 |
US8278736(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20100875217 |
申请日期 |
2010.09.03 |
申请人 |
JOU YEH-NING;HUNG CHIA-WEI;CHANG SHU-LING;CHIOU HWA-CHYI;HUANG YEH-JEN;VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
JOU YEH-NING;HUNG CHIA-WEI;CHANG SHU-LING;CHIOU HWA-CHYI;HUANG YEH-JEN |
分类号 |
H01L29/739;H01L23/60 |
主分类号 |
H01L29/739 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|