| 摘要 |
Disclosed are a resistive random access memory device (ReRAM) and a method for manufacturing the same. The ReRAM includes a cell array including a metal oxide nanowire formed inside a micropore array of a porous template, a first electrode electrically connected to an upper protrusion of the metal oxide nanowire, the upper protrusion being exposed to an upper portion of the porous template, and located in an upper portion of the cell array, and a second electrode electrically connected to a lower protrusion of the metal oxide nanowire, the lower protrusion being exposed to a lower portion of the porous template, and located in a lower portion of the cell array. |
