发明名称 Highly pure film formation method for light emitting device using gas from evaporated electroluminescent source
摘要 There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impurity, which are included in the EL material. Also, when film formation is performed using the EL material (high purity EL material) obtained by purifying with sublimation as an evaporation source, a high purity EL layer can be formed.
申请公布号 US8278135(B2) 申请公布日期 2012.10.02
申请号 US20070856774 申请日期 2007.09.18
申请人 YAMAZAKI SHUNPEI;KONUMA TOSHIMITSU;NISHI TAKESHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KONUMA TOSHIMITSU;NISHI TAKESHI
分类号 H01J9/233;C23C14/24;C23C14/56 主分类号 H01J9/233
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