Semiconductor electrically programmable fuse (eFuse) having a polysilicon layer not doped with an impurity ion and a programming method thereof

摘要

A semiconductor device includes a first terminal, a second terminal, and a fuse link that connects between the first terminal and the second terminal. The first terminal and the fuse link have a polysilicon layer doped with an impurity ion and a layer containing a metal element laminated on the polysilicon layer. The second terminal has a polysilicon layer not doped with an impurity ion and a layer containing a metal element laminated on the polysilicon layer, in at least a part of an end side connected to the fuse link.