发明名称 |
Chemical vapor deposition apparatus |
摘要 |
There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas. |
申请公布号 |
US8277561(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20080257131 |
申请日期 |
2008.10.23 |
申请人 |
KIM CHANGSUNG SEAN;CHOI CHANG HWAN;HONG JONG PA;KIM JOONG EL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM CHANGSUNG SEAN;CHOI CHANG HWAN;HONG JONG PA;KIM JOONG EL |
分类号 |
C23C16/455;C23C16/06;C23C16/22 |
主分类号 |
C23C16/455 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|